The Chair of Photonics and Ultrafast Laser Science and the spin-off RayVen are jointly developing a novel ultrafast pulse laser with European partners. This technology aims to enhance the production of three-dimensional semiconductor chips. The research project is supported with a total of three million euros through the European EIC Pathfinder funding program.
Modern semiconductor chips increasingly consist of multiple layers stacked on top of each other, electrically connected via so-called through-silicon vias (TSVs). These tiny connections are a crucial component of high-performance 3D semiconductor architectures.
As part of the research project, the partners are developing a novel ultrafast pulse laser capable of creating particularly small and deep structures in silicon. The laser operates at a central wavelength of two micrometers in the so-called gigahertz-burst mode.
The four-year project, which launched in April 2026, involves the Chair of Photonics and Ultrafast Laser Science from our faculty, led by Prof. Dr. Clara Saraceno, the Bochum spin-off RayVen, led by Dr. Celia Millon, the French research center CNRS, as well as the companies CRYTUR and LASEA.
