The chair for microsystem technology has facilities for the preparation of semiconductor micro- and nanostructures.
These include, among others:
|Laser lithography system (structure widths > 600 nm)|
|Scanning electron miscroscope / electron beam lithography system|
|Inert gas glove box with spin coater and Ozone Cleaner|
|Plasma etching machine (ICP-RIE) |
|Plasma coating system (ICPECVD)|
During the preparation, the components and systems are characterized with the following devices:
- optical miscroscopes
- Interference microscope
- Confocal microscope
- Scanning probe microscopes (AFM, MFM)
Several cryostats (temperature range: 300 mK to 500 K) and electromagnets and superconducting magnets (up to 17 T) are available for magnetic field-dependent and temperature-dependent measurements. The electrical characterization is carried out using semiconductor parameter analyzers, lock-in technology (up to f = 200 MHz) and capacitance-voltage measuring devices.